发明名称 |
METHOD OF CLEANING SUBSTRATE TREATMENT APPARATUS |
摘要 |
<p>A treatment chamber having insulating substances sticking thereto is heated at 300 to 450ºC, and simultaneously a cleaning gas of vaporized hexafluoroacetylacetone (Hhfac) is fed into the treatment chamber. When the cleaning gas fed into the treatment chamber is brought into contact with insulating substances sticking to the inside wall and susceptor of the treatment chamber, complexes of substances constituting the insulating substances are formed. The vapor pressure of such complexes is so high that vaporization readily occurs. Discharging the vapor from the treatment chamber enables emission of the complexes from the treatment chamber.</p> |
申请公布号 |
WO2004006317(A1) |
申请公布日期 |
2004.01.15 |
申请号 |
WO2003JP08318 |
申请日期 |
2003.07.01 |
申请人 |
TOKYO ELECTRON LIMITED;DOBASHI, KAZUYA;OSHIMA, YASUHIRO |
发明人 |
DOBASHI, KAZUYA;OSHIMA, YASUHIRO |
分类号 |
C23C16/44;B08B7/00;H01L21/3065;H01L21/31;(IPC1-7):H01L21/31;H01L21/306 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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