METHOD FOR MANUFACTURING TRANSISTOR, INTEGRATED CIRCUIT AND ELECTRO-OPTICAL DEVICE USING SAME, AS WELL AS ELECTRONIC APPARATUS MOUNTED WITH THE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of establishing the characteristics of the bulk of a gate insulating film and the characteristics of an MOS interface.

SOLUTION: This method for manufacturing a transistor comprises a process (Fig. (f)) for depositing silicon oxide made of at least TEOS and oxygen on a semiconductor being the active layer of an MOS transistor by a parallel flat RF plasma CVD method to form a gate insulating film, a process (Fig. 1(g)) for forming a semiconductor film on the gate insulating film, and a process (Fig. 1(g)) for carrying out heat treatment to the gate insulating film.

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