METHOD FOR FORMING PATTERN

摘要

PROBLEM TO BE SOLVED: To prevent reduction in the film thickness of a resist pattern cured through irradiation with an electron beam. SOLUTION: After pattern exposure is performed by irradiating a resist film formed on a substrate 10 selectively with exposing light, the resist film is developed to form a resist pattern 14A. The resist pattern 14A is then irradiated with an electron beam 16 while cooling the substrate 10 by means of a chiller 15, thus obtaining a cured resist pattern 14B. COPYRIGHT: (C)2004,JPO