| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermoelectric material in which a dimensionless performance index of a thermoelectric device has a small reduction due to a temperatures rise, and which enhances a thermoelectric characteristic. SOLUTION: When A is Bi and/or Sb, A' is Pb and/or Sn, B is one kind or more of compound semiconductor selected from Te, Se and S, and C is at least one kind of compound semiconductor selected from a group consisting of PbTe, SnTe, Li<SB>2</SB>Te, ZnI<SB>2</SB>, BiI<SB>3</SB>, CdI<SB>2</SB>, BI<SB>2</SB>Te<SB>3</SB>, Bi<SB>2</SB>Se<SB>3</SB>, Sb<SB>2</SB>Te<SB>3</SB>, Sb<SB>2</SB>Se<SB>3</SB>, CeTe<SB>2</SB>, and TiSe<SB>2</SB>, the compound semiconductor of C is annexed to the compound semiconductor represented by A<SB>2</SB>B<SB>3</SB>or A'B in the range which exceeds 0 and is 10 wt.% or less based on A<SB>2</SB>B<SB>3</SB>or A'B. COPYRIGHT: (C)2004,JPO
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