| 摘要 |
PROBLEM TO BE SOLVED: To provide a driving circuit of a laser diode, in which a leakage current between a drain and a source can be reduced even under a condition where a gate bias is deep. SOLUTION: Current source FETs of differential pairs of FETs constituting the driving circuit of the laser diode are mutually connected in series. Gate bias potential with respect to FETs which are connected in series is properly applied by resistance division. Thus, a voltage obtained by dividing a voltage applied between the drain and the source of current source FET in two FETs arranged in series and applying it to one FET becomes lower than a voltage applied to current source FET of a conventional structure. Thus, the driving circuit of the laser diode, in which the leakage current between the drain and the source can be reduced even under the condition where the gate bias is deep can be provided. COPYRIGHT: (C)2004,JPO
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