| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent discontinuity at the time of WET etching and to prevent aluminum constituting a signal line from spreading to the drain electrode of a pixel switching element in an array substrate equipped with the signal line having three layer structure of a lower layer Mo/AlNd / an upper layer Mo. <P>SOLUTION: In the signal line having a three layer structure of a lower layer Mo/AlNd / an upper layer Mo, film thickness of the lower layer Mo is made between 13nm and 20nm. <P>COPYRIGHT: (C)2004,JPO</p> |
