METHOD FOR GROWING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for growing a compound semiconductor single crystal by regulating a solid-liquid boundary shape in such a manner that the compound semiconductor single crystal can be obtained with good reproducibility by an LEC (Liquid Encapsulated Czochralski) method. SOLUTION: The compound semiconductor single crystal is grown by maintaining the degree A/B of the size A of the convexity of the solid-liquid boundary 5 to the thickness B of the melt 3 at the axial section in a growth direction in such a manner that the degree ranges from≥0.2 to <0.9, more preferably ranges from≥0.2 to≤0.8 in the growth of a fixed diameter section 1b excluding the increased diameter section in the initial period of the growth and the decreased diameter section in the end period of the growth. COPYRIGHT: (C)2004,JPO