发明名称 |
Nitrogen-doped silicon substantially free of oxidation induced stacking faults |
摘要 |
The present invention relates to single crystal silicon, ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect, is substantially free of oxidation induced stacking faults and is nitrogen doped to stabilize oxygen precipitation nuclei therein, and a process for the preparation thereof.
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申请公布号 |
US2004009111(A1) |
申请公布日期 |
2004.01.15 |
申请号 |
US20030380806 |
申请日期 |
2003.07.30 |
申请人 |
HAGA HIROYO;AOSHIMA TAKAAKI;BANAN MOHSEN |
发明人 |
HAGA HIROYO;AOSHIMA TAKAAKI;BANAN MOHSEN |
分类号 |
C30B15/00;(IPC1-7):C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04;C01B33/26 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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