| 摘要 |
PROBLEM TO BE SOLVED: To process two substrates at once under the same heat environment by using a dry cleaning method. SOLUTION: In a dry cleaning device having a treatment chamber 1 wherein a dry cleaning treatment is carried out, a holding tool 2 for holding two wafers A, B parallel in the chamber 1 such that flat surfaces A2, B1 thereof are opposed each other and a remote plasma unit 3 for activating treatment gas for treating the wafers A, B by a plasma, a lamp 4 is disposed in a side in opposition to an edge face of a wafer so that infrared ray can be emitted directly to each of the opposed flat surfaces A2, B1 of the wafers A, B and infrared ray reflecting members 52, 51 for reflecting part of infrared ray emitted from the lamp 4 to each of flat surfaces A1, B2 of the wafers A, B, which are not opposed, are provided. COPYRIGHT: (C)2004,JPO |
