| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and equipment for forming an analog capacitor on a semiconductor substrate. SOLUTION: This method includes a process where a field oxide is formed on a portion of a substrate, and a polysilicon layer is formed on the field oxide, then a silicide layer is formed on the layer. A first interlayer dielectric layer is formed on the substrate, and a capacitor masking pattern is formed. Using the capacitor masking pattern as a mask and the silicide layer as an etch stop, the first interlayer dielectric layer is etched to form a thin dielectric on the substrate. A contact masking pattern is formed on the substrate. Using the silicide layer and substrate as etch stops, second etching is performed on the thin dielectric. A metal layer is deposited on the substrate, then planarized. Thus, an analog capacitor is configured. COPYRIGHT: (C)2004,JPO
|
