| 摘要 |
PROBLEM TO BE SOLVED: To make steep dopant distribution in a channel region by avoiding point defects without using any processes for removing thick gate sidewalls after forming deep source/drain regions by a manufacturing method in a minute field effect transistor whose gate length is equal to or less than 0.1 micron. SOLUTION: After a gate electrode is formed, a first-conductivity-type dopant is ion-implanted with high concentration, heat treatment is made, a second-conductivity-type dopant is ion-implanted, a sidewall is formed on a gate side, the first-conductivity-type dopant is ion-implanted, and then heat treatment is made for manufacturing the field effect transistor. COPYRIGHT: (C)2004,JPO
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