| 摘要 |
PROBLEM TO BE SOLVED: To deposit a hafnium carbide thin film without heating a substrate. SOLUTION: In the film deposition method, among particles released from the side face of a vapor deposition material 31 by arc discharge, as for positive electrically-charged particles having a low charge mass ratio, their travel direction is bent toward the substrate by the magnetic field generated by arc current. On the other hand, neutral particles 81 and electrically-charged particles 84 having a low charge mass ratio have a reduced ratio to be bent by the magnetic field, so that they do not fly to the direction of the substrate, but stick to the inner circumferential face of an anode electrode 32, and thus do not reach the substrate. In this way, only ionized hafnium particles having a high charge mass ratio and high activity reach the substrate, so that the hafnium particles and an organic gas are reacted even without heating the substrate, and a thin film of hafnium carbide is deposited. COPYRIGHT: (C)2004,JPO
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