| 发明名称 |
Gate structure and method |
| 摘要 |
CMOS gate structure with metal gates having differing work functions by texture differences between NMOS and PMOS gates.
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| 申请公布号 |
US2004007747(A1) |
申请公布日期 |
2004.01.15 |
| 申请号 |
US20020195271 |
申请日期 |
2002.07.15 |
| 申请人 |
VISOKAY MARK R.;ROTONDARO ANTONIO L. P.;COLOMBO LUIGI |
发明人 |
VISOKAY MARK R.;ROTONDARO ANTONIO L. P.;COLOMBO LUIGI |
| 分类号 |
H01L21/28;H01L21/8238;H01L29/49;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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