发明名称 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a practical magnetoresistive element superior in energy conversion efficiency. <P>SOLUTION: The magnetoresistive element contains a first ferromagnetic layer 1 and a second ferromagnetic layer 2 disposed away from each other in an in-plane direction of the layer, a conductive layer 3 for electrically connecting these ferromagnetic layers, and a magnetic transfer layer 5 which can transfer between a ferromagnetism, a paramagnetism and an antiferromagnetism, and is disposed so as to magnetically connect with the first ferromagnetic layer 1 in a ferromagnetic state. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004014806(A) 申请公布日期 2004.01.15
申请号 JP20020166285 申请日期 2002.06.06
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ODAKAWA AKIHIRO;MATSUKAWA NOZOMI;SUGITA YASUNARI
分类号 G11C11/15;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):H01L43/08 主分类号 G11C11/15
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