NON-VOLATILE MEMORY CELL, MEMORY ELEMENT, AND METHOD FOR MANUFACTURING NON-VOLATILE MEMORY CELL

摘要

PROBLEM TO BE SOLVED: To provide a non-volatile memory cell which can be written in a first direction and read in a second direction.

SOLUTION: This non-volatile memory cell include one or two charge trap regions 20 arranged near the source 70 and/or the drain 50. Herewith, when programming, electrons can be injected into the charge trap region 20 by the injection of the thermal electrons, and when erasing, holes can be injected into the charge trap region 20. Additionally, the charge trap region 20 is overlapped with a control gate by the length that the electrons injected when programming can be neutralized by the holes injected later into the charge trap region 20.

COPYRIGHT: (C)2004,JPO