| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser diode and its manufacturing method that can reduce the leakage current when operating at a high temperature by improving the current blocking property. SOLUTION: The side of the ridge shaped clad layer 6 forms the light guide between the current blocking layers 8 of a semiconductor laser diode, and its side parallel with the output direction is covered with a dielectric film 7 such as SiO<SB>2</SB>. Since the dielectric film 7 is formed at both side of the ridge shaped clad layer 6, the leakage current from this area does not increase at high temperatures (about +70°C or higher). Further, the current blocking layers 8 do not grow farther from the side of the clad layer 6 and there is nothing to stop the growth of the clad layer 6. Thus, the current blocking property is improved. Further, an etching stop layer can be provided between the p clad layer 6 and the p current diffusion layer 4 to make the processing easy. COPYRIGHT: (C)2004,JPO
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