| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is prevented from generating a leak current flow on the re verse surface of an element separating insulating film since a depletion layer includes an interfacial potential generation part, and to provide a method for manufacturing the same. SOLUTION: An N type impurity diffusion region 5 is formed in an element formation region surrounded with a field insulating film 2. In the region between an end of the N type impurity diffusion region 5 and an end of a field oxide film 2, a P type impurity diffusion region 4 is formed including an interfacial potential generation part below a bird's beak part 2a. Consequently, a PN junction part is formed at a distance from the interfacial potential generation part. Therefore, even when a voltage is applied to the PN junction part, the depletion layer 10 does not reach the interfacial potential generation part. COPYRIGHT: (C)2004,JPO
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