发明名称 Method of detecting a polishing end point in a chemical mechanical polishing process
摘要 Disclosed is a method of detecting a polishing end point in a chemical mechanical polishing process. Variation in the concentration of a material within an initial polishing layer or a material within a polishing stop layer, which are contained in polishing waste water drained during a polishing process, are monitored. A polishing process condition is adequately controlled or the polishing process is finished, depending on variation data value in the monitored concentration. It is thus possible to exactly detect the polishing end point regardless of the type of the materials in the initial polishing layer and the polishing stop layer. Therefore, reproducibility of the polishing process can be improved.
申请公布号 US2004010380(A1) 申请公布日期 2004.01.15
申请号 US20030616198 申请日期 2003.07.09
申请人 KIM HYUNG JUN 发明人 KIM HYUNG JUN
分类号 H01L21/304;B24B37/04;B24B49/04;(IPC1-7):G06F19/00 主分类号 H01L21/304
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