发明名称 MEMORY DEVICE READING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a reading apparatus for reading a memory device at higher speed. <P>SOLUTION: This memory device reading apparatus reads data stored in memory cells of the memory device by using two reference voltages. The reading apparatus is provided with first, second, and third comparators. The first comparator receives a low reference voltage and the cell voltage of the memory cell, and outputs a first value in accordance with this. The second comparator receives a high reference voltage and the cell voltage of the memory cell, and outputs a second value in accordance with this. The third comparator receives the first and the second values, and outputs data stored in the memory cell in accordance with it. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004014096(A) 申请公布日期 2004.01.15
申请号 JP20030125717 申请日期 2003.04.30
申请人 MICRONICS INTERNATL CO LTD 发明人 SHIN-I HO;NAI-PIN KUO;CHUN-SHUN HAN;GIN-RIAN CHEN;WEN-CHIAO HO;HO-CHUN RYOU
分类号 G11C16/06;G11C7/00;G11C16/04 主分类号 G11C16/06
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