| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile ferroelectric memory transistor which can prevent the degradation of the memory holding characteristic due to leakage current, and to provide its manufacturing method. SOLUTION: This ferroelectric memory transistor comprises a substrate including a source region, a gate region and a drain region, a gate stack arranged on the gate region, passivation oxide layers arranged on the substrate and the gate stack, and metallized parts for having each contact with the source/drain regions and the gate stack. The gate stack comprises a High-k insulator element including a first High-k cup and a second High-k cup, a ferroelectric element encapsulated by the High-k insulator element, and an upper electrode arranged on the the High-k insulator element. COPYRIGHT: (C)2004,JPO |
