发明名称 |
Method of preventing particle generation in plasma cleaning |
摘要 |
A method to prevent particle generation from sputtering clean is disclosed. the method comprises of forming a dielectric layer on a substrate, forming a nitrogen-containing dielectric layer on the dielectric layer, forming a plurality of contact holes in the dielectric layer and the nitrogen-containing dielectric layer, coating a sacrificial layer into the contact holes and on the nitrogen-containing dielectric layer, removing the sacrificial layer and the nitrogen-containing dielectric layer on top of the dielectric layer, removing said sacrificial layer in said contact holes and performing an argon sputtering clean.
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申请公布号 |
US2004009660(A1) |
申请公布日期 |
2004.01.15 |
申请号 |
US20020194630 |
申请日期 |
2002.07.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIU CHUNG-SHI;SHUE SHAU-LIN;YA CHEN-HUA |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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