Circuit element, useful as memory, comprises a monomolecular layer of redox-active bis-pyridinium molecules situated between conductive layers

摘要

A circuit element comprises a monomolecular layer of redox-active bis-pyridinium molecules situated between the first and second conductive layers, whereby the bis-pyridinium molecules of the monomolecular layer are immobilized on the electrically conductive layer as at least one discrete region. A circuit element (I) comprises a first layer of an electrically insulating substrate material with a first electrically conductive material comprising at least one discrete region that is embedded into or applied onto the substrate; a second layer with a second electrically conductive material and a monomolecular layer of redox-active bis-pyridinium molecules situated between the first and second layers, whereby the bis-pyridinium molecules of the monomolecular layer are immobilized on the electrically conductive layer as at least one discrete region and are in electrical contact with the second electrical material of the second layer and electrically inert molecules are immobilized on the first layer to form a matrix that surrounds at least one discrete region of the monomolecular layer of bispyridinium molecules. Independent claims are included for: (1) a process for the production of a circuit element (I) by application and/or embedding of a first electrically conductive material to at least one discrete position on/in the substrate material; immobilization of a monomolecular layer of redox-active bispyridinium molecules onto at least one discrete region of the first electrically conductive material; immobilization of electrically inert molecules onto the first layer of electrically insulating material that surround at least one region with the monomolecular layer of bis-pyridinium molecules; application of a second layer with a second electrically conductive material onto the layer of the electrically inert molecules and the bis-pyridinium molecules, whereby the bispyridinium molecules of the monomolecular layer are in contact with the second electrically material of the second layer; (2) bispyridinium compounds of formula (1) with the exclusion of N,N'-dimethyl-4,6,9,10-tetrahydro-2,7-diazapyreniumdiiodide; 1,1',2,2'-tetramethyl-4,4'-bispyridinium; 1,1',2-trimethyl-4,4'-bispyridinium; N,N'-dimethyl-2,7-diazapyrenium; N-methyl-N'-(p-toloyl)-2,7-diazapyrenium, 1,1'-dimethyl-2-phenyl-6-(p-toloyl)-4,4'-bispyridium diperchlorate; 1,1'-dimethyl-2-phenyl-4,4'-bispyridium diperchlorate; 6-(phenyl)-1,1',2-trimethyl-4,4'-bispyridium diperchlorate; 6-(phenyl)-1,1',2-trimethyl-4,4'-bispyridium diperchlorate or 1,1'-dimethyl-2-phenyl-6-(2,5-dichloro-3-thienyl)-4,4'-bispyridiumdiperchlorate. (1) Xa, XbS, N or O; Ra, Rbalkyl, aryl, alkylaryl, alkenyl, halogen, CN, OCN, COOH, COOR1>, CONHR1>, NO2, OH, OR1>, NH2, NHR1>, NR'R, SH or SR1>; R'R : alkyl, aryl, alkylaryl, alkenyl or alkinyl or Ra and Rb together form a bridge between the two aromatic ring systems comprising 1-3 atoms of C, S, N or O bonded by single, double or triple bonds and optionally substituted by Re; RcR a and Rb; Y : CH2, O, S, NH, NR1>, COO, CONH, CHCH, CC or aryl; Aa, ZbCH3, -CHCH2, SH, -SS-, SiCl3, Si(OR)3, SiR(OR')(OR), SiR(OR')2, Si(R'R)NH2, Si(R'2)NH2, COOH, SO3, PO3H or NH2; n, q : 0-12; j, k : 0-6; p., m : 0-12.