发明名称 FLASH MEMORY REWRITE CONTROL SYSTEM AND METHOD, PROGRAM FOR OPERATING PROCESSE IN FLASH MEMORY REWRITE CONTROL METHOD, AND INFORMATION STORAGE MEDIUM
摘要 <P>PROBLEM TO BE SOLVED: To provide a flash memory rewrite control system and method, a program for operating processes in the flash memory rewrite control method, and an information storage medium allowing the rewrite of a boot sector and/or a general sector in one downloading operation. <P>SOLUTION: A TMP area for temporarily storing data stored in the boot sector is arranged, and update data for rewrite and storage instruction data are obtained stored in a work area (1 in Fig 11). When the update data are stored in the boot sector, new boot data are created in the TMP area (5 in Fig 11). The old boot data are compared with the new boot data (6 in Fig 11). The boot sector is deleted if the data are different from each other, and the new boot data in the TMP area are written in the boot sector (7 in Fig 11). <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004013536(A) 申请公布日期 2004.01.15
申请号 JP20020166245 申请日期 2002.06.06
申请人 SEIKO EPSON CORP 发明人 MOCHIZUKI SHUGO
分类号 G06F12/16;G06F9/445;G06F11/00 主分类号 G06F12/16
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