| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory in which read speed can be increased, supply of boosting voltage to a word line is not required, and the increment of a circuit scale such as proving a boosting circuit can be prevented. SOLUTION: In a read operation, bit lines BL, XBL are previously pre-charged to a ground voltage VSS. After a DC bias current of a quantity being equal to those to the bit lines BL, XBL is supplied by a DC bias current supply circuit BA for a fixed time at the beginning of data read from a memory cell MC, a sense amplifier SA is activated. COPYRIGHT: (C)2004,JPO
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