发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a connection device having a contact terminal for contacting a test object at multiple points at high density and to provide its production method. SOLUTION: A hole to be a mold for forming a contact terminal 103 is formed by anisotropic etching of silicon wafer and by using the mold, an insulator film 104 consisting of the contact terminal 103 and polyimide film by using the mold and a conductor 105 for retrieving are formed. In between the insulator film 104 and a wiring board 107, the silicon wafer to be a buffer layer 108 and a board 109 is pinched to be one body and the mold is removed. Then, to an electrode 110a of the wiring board 107, the conductors 105 for retrieving is connected with solder 111. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004012470(A) 申请公布日期 2004.01.15
申请号 JP20030334546 申请日期 2003.09.26
申请人 RENESAS TECHNOLOGY CORP 发明人 KASUKABE SUSUMU;USAMI MITSUO;UEHARA KEIJIRO;TASE TAKASHI;ISHINO MASAKAZU;KASHIMURA TAKASHI
分类号 G01R31/26;G01R1/073;G01R31/28;H01L21/66;(IPC1-7):G01R1/073 主分类号 G01R31/26
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