| 摘要 |
PROBLEM TO BE SOLVED: To provide a supporting structure of a growth vessel capable of performing such heat flow control as to form a solid-liquid boundary to a shape convex to a liquid phase side in an apparatus for growing the compound semiconductor crystal. SOLUTION: In the apparatus for growing the compound semiconductor crystal by a VB method or VGF method, a growth vessel having a tapered section consisting of a seed crystal housing section 3a which is a section of the small diameter at a lower part and an increasing diameter section 3b of the diameter increasing upward from the seed crystal housing section and a straight cylindrical section 3c succeeding upward from the increasing diameter section is arranged inside a heater where the increased diameter section 3b is supported by a support 1, a recessed part 1a into which the seed crystal housing section 3a of the growth vessel is inserted and a slope section 1b in the form corresponding to the increased diameter section 3b are formed as a cradle at the apex of the support 1 and a low-thermal conductivity member layer 9 consisting of a material having the thermal conductivity lower than the thermal conductivity of the support 1 is disposed between the slope surface 1b of the support 1 and the increased diameter section 3b of the growth vessel. COPYRIGHT: (C)2004,JPO
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