发明名称 |
APPARATUS FOR GROWING SINGLE CRYSTAL |
摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for growing a single crystal capable of making a cooling body function effectively with respect to a trend toward an increasingly higher pulling up speed in pulling up a single crystal by a CZ (Czochralski) method by using the cooling body and further capable of effectively preventing the crack of the single crystal due to excessive cooling of the single crystal. SOLUTION: The apparatus for growing the single crystal from a raw material melt by the CZ method is provided with an annular cooling body so as to encircle the single crystal grown from the raw material melt. The cooling body is cooled by the gas flowing in the cooling body, The gas is cooled by circulation and the danger of steam explosion in the case of the failure of the cooling body is averted by using inert gas as the cooling gas. COPYRIGHT: (C)2004,JPO
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申请公布号 |
JP2004010465(A) |
申请公布日期 |
2004.01.15 |
申请号 |
JP20020170455 |
申请日期 |
2002.06.11 |
申请人 |
SUMITOMO MITSUBISHI SILICON CORP |
发明人 |
NAKAMURA TAKESHI;FUJIWARA TOSHIYUKI;FUJIWARA HIDEKI |
分类号 |
C30B15/00;C30B29/06;(IPC1-7):C30B15/00 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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