| 摘要 |
A reaction apparatus for atomic layer deposition includes a vacuum chamber having a gas inlet, a gas outlet, and a gas flow path for connecting the gas inlet and the gas outlet; a reactor located in the vacuum chamber, including a reaction chamber where a first gas, which is input through the gas flow path, reacts with a specimen in the reaction chamber, the reactor further including a gas distributor, which is located in the reaction chamber to evenly supply the gas; a specimen location controller for moving the specimen located in the vacuum chamber to the reaction chamber; and an analyzer, which is connected to the reaction chamber, for analyzing a second gas generated in the reaction chamber. The apparatus is able to deposit uniform atomic layers on a specimen by maintaining the pressure and flow of reactant gas and can deposit and analyze an atomic layer simultaneously.
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