发明名称 METHOD OF PROCESSING SUBSTRATE AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To selectively form a protection film on a front surface of an interconnection line to protect the interconnection line, and to secure a sufficient flatness for an insulation film or the like which is deposited on the front surface of the substrate whereon the protective film is formed, eliminating a process of planarizing the front surface. SOLUTION: An interconnection line material 7 is embedded in a fine recessed portion 4 for interconnection line formed in the front surface of the substrate. After planarizing the front surface of the substrate by removing an unwanted interconnection line material, the interconnection line material 7 is further removed to from a recessed portion 4a to be filled in an upper part of the fine recessed portion 4. Then, a protective film 9 is selective formed inside the recessed portion 4a to be filled. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004015028(A) 申请公布日期 2004.01.15
申请号 JP20020170588 申请日期 2002.06.11
申请人 EBARA CORP 发明人 SHIRAKASHI MICHIHIKO;YASUDA HOZUMI;OBATA ITSUKI
分类号 C23C18/31;C23F1/00;C25F3/14;H01L21/02;H01L21/288;H01L21/304;H01L21/3063;H01L21/3205;(IPC1-7):H01L21/320;H01L21/306 主分类号 C23C18/31
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