| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface emitting laser device which has a low threshold current and a large slope efficiency. SOLUTION: On an n-type substrate 1, a reflection side semiconductor multilayer reflecting mirror 2, a lower clad layer 3, an active layer 4, an upper clad layer 7, and an emission side semiconductor multilayer reflecting mirror 8 are laminated in this order. Inside the emission side semiconductor multilayer reflecting mirror 8, there are an opening 5 and a selective oxidation layer 6 arranged around the opening 5. The upper part of the lower clad layer 3 and the semiconductor layers above the lower clad layer 3 are arranged in the shape of a mesa post. The entire part of the mesa post-shaped region except a top surface and the entire part of a top surface of the lower clad layer 3 are covered with a protective layer 10. A polyimide layer 11 is located in the periphery of the mesa post-shaped region, and a p-side electrode 12 having an opening is located at the center. On the lower surface of the n-type substrate 1, an n-side electrode 13 is located. The reflectivity of the emission side semiconductor multilayer reflecting mirror 8 is 99.4% to 99.8%, while that of the reflection side semiconductor multilayer reflecting mirror 2 is 99.9% or above. COPYRIGHT: (C)2004,JPO
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