发明名称 |
VERTICAL HEAT TREATMENT FURNACE AND ITS GAS INTRODUCTION METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a vertical heat treatment furnace that can efficiently supply an enough amount of gas all over the surfaces of a plurality of wafers, and provide its gas introduction method. SOLUTION: The furnace is an improved vertical heat treatment furnace which has supports 12a to 12d disposed semicircularly with certain spacing inside the cylindrical furnace 11 opposing to the wafer 22 input/output side, a wafer boat 13 to horizontally support the wafers, and a gas introduction pipe 14 erected along the furnace wall opposing to the wafer 22 input/output side. Its featured constitution is that the gas introduction pipe is erected between the furnace wall and the support 12a disposed at the wafer input/output side and has a plurality of jet nozzles 23 spaced in the length direction to jet the gas parallel with the wafer surfaces and along the furnace wall of the wafer input/output side to form a swirl inside the furnace. COPYRIGHT: (C)2004,JPO
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申请公布号 |
JP2004014910(A) |
申请公布日期 |
2004.01.15 |
申请号 |
JP20020168334 |
申请日期 |
2002.06.10 |
申请人 |
SUMITOMO MITSUBISHI SILICON CORP |
发明人 |
TAKASHINA HIROYUKI;ONO NAOKI;NAKAI TETSUYA |
分类号 |
C23C16/455;H01L21/02;H01L21/205;H01L21/22;H01L21/322;H01L21/324;H01L27/12;(IPC1-7):H01L21/324 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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