| 摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of fabricating a thin semiconductor device without remodeling the facility. SOLUTION: The method for fabricating a thin semiconductor device comprises a step for forming a first conductivity layer and a second conductivity layer on a first conductivity substrate; and a step for forming an oxide layer on the surface of any one of the second conductivity layer formed on the first conductivity substrate or a second conductivity substrate, and bonding the first conductivity substrate and the second conductivity substrate through the oxide film. The method further comprises a step for polishing the first conductivity substrate to have a specified thickness; a step for forming a base region, an emitter region, a gate electrode, and an emitter electrode on the first conductivity substrate; a step for forming a mask selectively on the surface of the second conductivity substrate; a step for sealing the surface on the side of the gate electrode and the emitter electrode being formed on the first conductivity substrate, and removing the second conductivity substrate; a step for removing the mask and the exposed oxide film; and a step for etching the surface of the second conductivity layer to have a specified thickness. COPYRIGHT: (C)2004,JPO
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