METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form a gate insulation film having a thermal oxide film with a uniform film thickness. SOLUTION: A CVD oxidation film 3 is formed on the surface of a substrate 1 without directly forming the thermal oxide film on the surface of the substrate 1. Then a nitride film 4 is deposited on the CVD oxide film 3. A thermal oxide film 5 is formed on the nitride film 4 by conducting heat treatment under an oxidation atmosphere. Thus, the gate insulation film having the thermal oxide film 5 with a uniform film thickness can be formed. COPYRIGHT: (C)2004,JPO