| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that it is difficult to easily improve a breakdown voltage of a semiconductor device. SOLUTION: A liquid protective coat material composed of an organic silicon compound is applied to the tilting side face 7 of a semiconductor substrate 2 having a PN junction 12 between a p-type semiconductor region 11 and an n-type semiconductor region 10, and the material is heated. Thus, a glass-like protective coat 8 is formed. A wafer 2a having the protective coat 8 is put in plasma treatment, non-balanced plasma treatment is performed on the wafer in an oxygen atmosphere of low pressure, and negative charge is given to the protective coat 8. COPYRIGHT: (C)2004,JPO
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