| 摘要 |
PROBLEM TO BE SOLVED: To provide a SOI (silicon insulator) substrate and a method for manufacturing the same by which a stable gettering effect is obtained, the number of manufacturing processes is reduced, a time for manufacturing the SOI substrate is reduced, and the film thickness of a SOI layer is controlled easily and which are suitable for manufacturing the SOI substrate having a thin-film SOI layer. SOLUTION: Since openings 10c and 10d are formed at an embedded silicon oxide film 10b by dry etching and the SOI layer 10A is connected partially with a wafer 20 for a supporting substrate at a connection area part X, iron and nickel in the SOI layer 10A can be captured to the gettering site of the wafer 20 via the connection area part X. As the result, the stable gettering effect is obtained on the entire surface of the wafer, the number of manufacturing processes of the SOI substrate is reduced, the time for manufacturing the SOI substrate is reduced, the film thickness of a SOI layer is controlled easily, and the method is suitable for manufacturing the SOI substrate having the thin-film SOI layer 10A. COPYRIGHT: (C)2004,JPO
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