METHOD FOR THE PRODUCTION OF A SHORT CHANNEL FIELD EFFECT TRANSISTOR

摘要

The invention relates to a method for the production of a short channel field effect transistor comprising the following steps: configuring a sublithographic gate sacrifice layer (3M), configuring spacers (7S) in the side walls of the gate sacrifice layer (3M), removing the gate sacrifice layer (3M) for configuring a gate groove and configuring a gate dielectric (10) and a control layer (11) in the gate groove. A short channel FET having minimal fluctuations in critical dimensions of less than 100 nanometers is thereby obtained.