SEMICONDUCTOR DEVICE HAVING SCHOTTKY BARRIER

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which permits the achievement of raising the breakdown voltage of a Shottky barrier diode by suppressing increase in a voltage drop in a forward direction and increase in a reverse recovery time.

SOLUTION: A semiconductor substrate 10 having an n-type semiconductor region 14 and a cathode side n+-type semiconductor region 15 is prepared. A plurality of inside p+-type semiconductor regions 16 are formed in the scheduled region of a first electrode 11 functioning as a Schottky barrier electrode in the substrate 10 while an outside p+-type semiconductor region 17 functioning as a guard ring is formed on a part surrounding them. An anode side n+-type semiconductor region is arranged between a plurality of mutual inside p+ semiconductor regions 16. The first electrode 11 is in contact with the inside p+-type semiconductor region 16 through ohmic contact while the Schottky barrier is contacted with the anode side n+-type semiconductor region 18. A second electrode 12 is in contact with the outside p+-type semiconductor region 17.

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