| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To simplify a step and avoid alignment using a plurality of masks to improve alignment accuracy. <P>SOLUTION: A resist layer 14a having a plurality of different film thickkness areas that corresponds with a plurality of different patterns generated by using a half-tone mask having a half-tone area for a photomask, is used to etch a base silicon layer 13 that is formed on the surface of a glass substrate 11, by using a transmission pattern 2 forming a thinnest-film thickness as an opening pattern, forming an alignment pattern 4. Next, the surface of the resist layer 14a is entirely removed by ashing to expose a base silicon layer 13a in a main pattern area 5, and ions are implanted into the entire surface of the resist layer 14a to dope only the main pattern area 5 in the base silicon layer 13a. Doping is not limited as a step following the etching step. <P>COPYRIGHT: (C)2004,JPO</p> |
