| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device and its manufacturing method capable of high integration. SOLUTION: The semiconductor device comprises an aperture 7 having a rectangular cross sectional configuration formed in a semiconductor substrate 1, a source area 8 formed on a bottom of the aperture 7, an ONO film 9 formed on the entire surface of an inner wall of the aperture 7, a gate electrode 10 formed in the aperture 7 via the ONO film 9, and four drain areas 5 insulated from each other along four sides of the aperture 7 and the ONO film 9. The device further comprises transistors in high integration, say, four transistors for the one gate electrode 10. And to provide a manufacturing method for the semiconductor device. COPYRIGHT: (C)2004,JPO
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