| 摘要 |
PROBLEM TO BE SOLVED: To reduce a charge and discharge current of redundant cells at the time of writing and reading without using a poly-fuse. SOLUTION: Respective pairs of bit lines RT0, RB0 constituting a memory cell 4 are provided at a pull-up circuit 1 and a pull-down circuit 2, a redundant signal RED0 is made non-active for a pair of redundant bit lines not used or a defective pair of bit lines which is replaced by a redundant cell and becomes needless due to detection of trouble by inputting a redundant signal RED0 outputted from a replacement information storing circuit 3 t the gate terminal, potential levels of the pairs of bit lines are always fixed to a power source potential VCC and a ground potential GND respectively, an internal pre-charge signal PRE2 generated from a pre-charge signal generating circuit 5 is made non-active by the redundant signal RED0 outputted from the replacement information storing circuit 3, and pre-charge operation of bit lines is prohibited. COPYRIGHT: (C)2004,JPO
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