| 发明名称 |
Nonvolatile semiconductor memory device |
| 摘要 |
A memory cell of a nonvolatile semiconductor memory device is formed on a silicon layer formed on a silicon substrate through an ONO film. The memory cell has a source region and a drain region formed in the silicon layer, an ONO film and a gate electrode. The ONO film and the ONO film include nitride films having charge trap parts trapping charges.
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| 申请公布号 |
US2004007734(A1) |
申请公布日期 |
2004.01.15 |
| 申请号 |
US20020330093 |
申请日期 |
2002.12.30 |
| 申请人 |
KATO HIROSHI;KUGE SHIGEHIRO;NODA HIDEYUKI;MORISHITA FUKASHI;UENO SHUICHI |
发明人 |
KATO HIROSHI;KUGE SHIGEHIRO;NODA HIDEYUKI;MORISHITA FUKASHI;UENO SHUICHI |
| 分类号 |
G11C16/04;H01L21/28;H01L21/8247;H01L27/115;H01L29/786;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
G11C16/04 |
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