发明名称 Plasma etching apparatus and plasma etching method
摘要 A plasma processing method for plasma processing a specimen utilizing a plasma processing apparatus including a plasma generating unit, a process chamber capable of having an inside pressure thereof reduced, wherein the process chamber includes an outer cylinder having the capability of withstanding a reduced pressure, and an inner cylinder arranged inside the outer cylinder and a process gas supply unit for supplying a gas to the process chamber, a specimen table for holding a specimen, a vacuum pumping unit, and a monitor unit. the method includes detecting a temperature of the inner cylinder of the process chamber utilizing the monitor unit to one of continuously monitor the inner cylinder temperature and optionally monitor the inner cylinder temperature at a time of plasma processing of a specimen.
申请公布号 US2004009617(A1) 申请公布日期 2004.01.15
申请号 US20030617019 申请日期 2003.07.11
申请人 MASUDA TOSHIO;TAKAHASHI KAZUE;SUEHIRO MITSURU;KAJI TETSUNORI;KANAI SABURO 发明人 MASUDA TOSHIO;TAKAHASHI KAZUE;SUEHIRO MITSURU;KAJI TETSUNORI;KANAI SABURO
分类号 C30B25/10;C23F4/00;C30B25/16;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H01L21/00 主分类号 C30B25/10
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