发明名称 Versatile system for optimizing current gain in bipolar transistor structures
摘要 Disclosed are apparatus and methods for designing electrical contact for a bipolar emitter structure. The area of an emitter structure (106, 306, 400, 404) and the required current density throughput of an electrical contact structure (108, 308, 402, 406) are determined. A required electrical contact area is determined based on the required current density, and the electrical contact structure is then designed to minimize the required electrical contact area with respect to the emitter structure area.
申请公布号 US2004007716(A1) 申请公布日期 2004.01.15
申请号 US20020196634 申请日期 2002.07.15
申请人 TROGOLO JOE;CHATTERLEE TATHAGATA;SPRINGER LILY;SMITH JEFF 发明人 TROGOLO JOE;CHATTERLEE TATHAGATA;SPRINGER LILY;SMITH JEFF
分类号 H01L21/331;H01L21/8249;H01L29/08;(IPC1-7):H01L31/032;H01L31/033;H01L29/70;H01L27/082 主分类号 H01L21/331
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