Production of a contact hole comprises forming a conducting coating on the substrate between two gate conducting structures, forming an intermediate dielectric layer on the substrate to cover the coating, and forming a bit line contact hole

摘要

Production of a contact hole comprises preparing a semiconductor substrate (10) having a first gate conducting structure (161), a second gate conducting structure (162), a third gate conducting structure (163) and a fourth gate conducting structure (164) arranged over each other with the second and third gate conducting structures formed in an active region, forming a conducting coating in a conformal manner on the substrate between the second and third gate conducting structures, forming an intermediate dielectric layer on the whole surface of the substrate to cover the conducting coating and to fill the holes between the first and second gate conducting structures, the holes between the second and third gate conducting structures, the holes between the third and fourth gate conducting structures, and forming a bit line contact hole in the intermediate dielectric layer to expose the conducting coating. Independent claims are also included for alternative methods for producing the contact hole.