发明名称 WORK PROCESSING METHOD OF MICRO SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To easily work a micro semiconductor device whose thickness is not more than 100μand whose size is not more than 1mm square and to easily perform an operation for picking up the semiconductor device and loading it on an electronic part and the like. SOLUTION: A method comprises a process for bonding a semiconductor wafer 10 to a support plate 20 through a protection film 22 by making a circuit face to be a bonding face side, a process for thinning the semiconductor device to prescribed thickness, a process for making the semiconductor wafer into pieces, a process for losing adhesive property of the protection film and bonding the semiconductor device to a peeling film 26 so as to transfer it while the semiconductor device 10a is peeled from the protection film 22 and a process for supporting a peripheral edge of the peeling film by a support ring 28, losing adhesive property of the peeling film, thrusting up the semiconductor devices 10a with the peeling film 26 by a thrust-up pin 30 from a lower face side of the peeling film and picking up the thrust-up semiconductor device by a pickup device. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004014956(A) 申请公布日期 2004.01.15
申请号 JP20020169466 申请日期 2002.06.11
申请人 SHINKO ELECTRIC IND CO LTD 发明人 KOIZUMI NAOYUKI;MASHINO NAOHIRO;KURIHARA TAKASHI
分类号 H01L21/52;H01L21/00;H01L21/301;H01L21/304;H01L21/44;H01L21/68;H01L21/683;H01L21/78;(IPC1-7):H01L21/52 主分类号 H01L21/52
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