发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To prevent defects caused by peeled insulation resin films for sealing the element forming surface of a CSP-type semiconductor device. SOLUTION: A semiconductor chip 10 has an integrated-circuit portion 11, a plurality of pad electrodes 12 provided in the periphery of the chip 10, and a passivation film 13 covering the chip 10 and the pad electrodes 12. A plurality of wirings 14 each of which has one end connected with each pad electrode 12 and the other end becoming external terminal 14a are provided on the passivation film 13. Further, there is formed on the passivation film 13 including the plurality of wirings 14 a solder-resist film 16 which is made of an insulation resin material and has a plurality of opening portions 16a for exposing to the external the respective external terminals 14a. The wirings 14 and the integrated-circuit portion 11 are sealed integrally with each other by the solder-resist film 16. No solder-resist film 16 is formed on a peripheral edge portion 10a of the principal surface of the semiconductor chip 10. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004014893(A) 申请公布日期 2004.01.15
申请号 JP20020168078 申请日期 2002.06.10
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NAKAMURA YOSHIFUMI;SAWARA RYUICHI;SHIMOISHIZAKA NOZOMI;KAINO NORIYUKI;MIKI KEIJI;UCHIUMI KATSUKI;WATASE KAZUMI
分类号 H01L23/52;H01L21/3205;H01L23/12;(IPC1-7):H01L23/12;H01L21/320 主分类号 H01L23/52
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