发明名称 Substrate treating device and substrate treating method, substrate flattening method
摘要 A substrate processing apparatus has a processing space provided with a holding stand for holding a substrate to be processed. A hydrogen catalyzing member is arranged in the processing space to face the substrate and for decomposing hydrogen molecules into hydrogen radicals H*. A gas feeding port is arranged in the processing space on an opposite side of the hydrogen catalyzing member to the substrate for feeding a processing gas including at least hydrogen gas. An interval between the hydrogen catalyzing member and the substrate on the holding stand is set less than the distance that the hydrogen radicals H* can reach.
申请公布号 US2004007177(A1) 申请公布日期 2004.01.15
申请号 US20030363640 申请日期 2003.08.14
申请人 发明人 OHMI TADAHIRO;SUGAWA SHIGETOSHI;HIRAYAMA MASAKI;GOTO TETSUYA
分类号 H01L21/00;H01L21/30;H01L21/324;H01L21/336;H01L21/77;H01L21/84;H01L29/786;(IPC1-7):H01L21/44;C23C16/00 主分类号 H01L21/00
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