发明名称 |
METHODS FOR FABRICATING STRAINED LAYERS ON SEMICONDUCTOR SUBSTRATES |
摘要 |
Methods for fabricating multi-layer semiconductor structures including strained material layers using a minimum number of process tools and under conditions optimized for each layer. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or "FETs") that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced. |
申请公布号 |
WO03079415(A3) |
申请公布日期 |
2004.01.15 |
申请号 |
WO2003US08135 |
申请日期 |
2003.03.14 |
申请人 |
AMBERWAVE SYSTEMS CORPORATION;FITZGERALD, EUGENE;CURRIE, MATTHEW |
发明人 |
FITZGERALD, EUGENE;CURRIE, MATTHEW |
分类号 |
C30B25/02;C30B29/52;H01L21/00;H01L21/20;H01L21/205;H01L21/22;H01L21/337;H01L21/338 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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