Semiconductor device with a corrosion resistant bonding pad and manufacturing method thereof

摘要

A semiconductor device having a bonding pad, includes an alumina layer formed on a surface of the bonding pad before bonding a bonding wire to the bonding pad to prevent the surface of the bonding pad from degenerating during storage while awaiting the bonding step. A method of manufacturing a semiconductor device with such a bonding pad includes the steps of: forming an inter-layer insulating film, an aluminum layer, and a passivation film successively on a semiconductor substrate; forming a photosensitive resin film on the passivation film; opening a bonding pad by exposing a part of the aluminum layer with photolithographic etching using a fluorine gas etching; and baking the device in a water vapor atmosphere at a predetermined temperature and baking time to form the alumina layer.