发明名称 METHOD FOR PRODUCING A MANGANESE ALLOY SPUTTERING TARGET
摘要 <p>A manganese alloy sputtering target characterized in that oxygen is 1000ppm or less, sulfur is 200ppm or less and a forged texture is provided, and a method for producing a forged manganese alloy target stably by eliminating the drawbacks of manganese alloy that it is susceptible to cracking and has a low rupture strength. &lt;??&gt;A manganese alloy sputtering target which can form a thin film exhibiting high characteristics and high corrosion resistance while suppressing generation of nodules or particles is thereby obtained. &lt;IMAGE&gt;</p>
申请公布号 EP1380668(A1) 申请公布日期 2004.01.14
申请号 EP20020700590 申请日期 2002.02.18
申请人 NIKKO MATERIALS CO., LTD. 发明人 NAKAMURA, Y.
分类号 C22F1/02;B21J5/02;C22F1/00;B21J5/08;C22C5/02;C22C5/04;C22C22/00;C22F1/16;C22F1/18;C23C14/34;G11B5/39;G11B5/65;G11B5/851;H01L43/12;(IPC1-7):C23C14/34;C22C1/02 主分类号 C22F1/02
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