发明名称 |
METHOD FOR PRODUCING A MANGANESE ALLOY SPUTTERING TARGET |
摘要 |
<p>A manganese alloy sputtering target characterized in that oxygen is 1000ppm or less, sulfur is 200ppm or less and a forged texture is provided, and a method for producing a forged manganese alloy target stably by eliminating the drawbacks of manganese alloy that it is susceptible to cracking and has a low rupture strength. <??>A manganese alloy sputtering target which can form a thin film exhibiting high characteristics and high corrosion resistance while suppressing generation of nodules or particles is thereby obtained. <IMAGE></p> |
申请公布号 |
EP1380668(A1) |
申请公布日期 |
2004.01.14 |
申请号 |
EP20020700590 |
申请日期 |
2002.02.18 |
申请人 |
NIKKO MATERIALS CO., LTD. |
发明人 |
NAKAMURA, Y. |
分类号 |
C22F1/02;B21J5/02;C22F1/00;B21J5/08;C22C5/02;C22C5/04;C22C22/00;C22F1/16;C22F1/18;C23C14/34;G11B5/39;G11B5/65;G11B5/851;H01L43/12;(IPC1-7):C23C14/34;C22C1/02 |
主分类号 |
C22F1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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